This setup is used for Rutherford Backscattering Spectromony (RBS) with 4He⁺ and 4He²⁺ ions.

RBS is an analytical technique used to determine the composition and depth profile of samples and thin films by measuring the backscattering of impinging high energy ions. The energy of backscattered particles depends on the incoming beam energy as well as the target atom mass and depth inside the sample.

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General Information:

Maximum Voltage 2 MV

Energy range of impinging ions from 0.5 to 6 MeV (with 4He²⁺ ions)

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Injection Unit:

RF He-Plasma Source

Charge Exchange Canal (CEC) using Li-Vapor at 600 °C

90° analysing magnet

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Accelerator Unit:

SF₆-insulated, Cockroft-Walton type HV power supply (capacitivily coupled)

HV terminal stripper system (N₂)

switching magnet

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RBS Analysis Chamber:

vacuum system allows working pressures around 10^-7 mbar

sample rotation (phi-rotation, theta-tilt)

semiconductor detector with multichannel analyser

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